D*CRIPTION
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When CE is HIGH (deselected), the device *umes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV25616AL is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP T*e II, 44-pin LQFP and
48-pin Mini BGA (8mm x 10mm).

企业名：深圳市倍帝斯电子有限公司

类型：经销商

电话： 086 0755 83168273

联系人：王细平

地址：中国 广东 深圳市福田区 华强北路赛格科技园3栋东706室