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N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） VDS 650 V RDS(ON)TYP 290 mΩ ID 11.5 A Package Marking And Ordering Information Device Device Package Marking NCE65T360D TO-263 NCE65T360D NCE65T360 TO-220 NCE65T360 NCE65T360F TO-220F NCE65T360F

Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T360D NCE65T360 NCE65T360F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V), AC(f>1HZ) VGS ±30 V Continuous Drain Current at TC =25°C ID (DC) 11.5 11.5* A Continuous Drain Current at TC =100°C ID (DC) 7 7* A Pulsed drain current (Note 1) IDM (pluse) 46 46* A Maximum Power Dissipation(TC=25℃) Derate above 25°C PD 101 0.81 32.6 0.26 W W/°C Single pulse avalanche energy (Note2) EAS 144 mJ Avalanche current(Note 1) IAR 6 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.5 mJ

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