MBRS120T3G

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

MBRS120T3G Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, T J = 25°C)

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard−Ring for Stress Protection

• Pb−Free Package is Available 

MBRS120T3G Mechanical Characteristics 

• Case: Epoxy, Molded

• Weight: 95 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Cathode Polarity Band

企业名：珠海市金盈电子科技有限公司

类型：贸易/代理/分销

电话： 0756-8947678
0756-8712028

手机：18926988298

联系人：王生/陈生

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