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K9F1G08U0D-SIB0 K9F1G08UOD-SIBO SCBO 内存

K9F1G08U0D-SIB0 K9F1G08UOD-SIBO  SCBO 内存
K9F1G08U0D-SIB0 K9F1G08UOD-SIBO  SCBO 内存
  • 厂家:

    三星

  • 工作电压:

    2.7V ~ 3.6V

  • 封装:

    TSOP48

  • 储存单位:

    128*8bit

普通会员
  • 企业名:深圳市益田欣电子科技有限公司

    类型:经销商

    电话: 0755-83031455

    手机:13751177539

    联系人:陈小姐

    QQ: QQ:3052289727

    邮箱:454387222@qq.com

    地址:广东深圳福田区华强电子世界一号楼二楼11C059

商品信息


FLASH MEMORY

3

K9F1G08U0D

Samsung Confidential

1.0 Introduction

1.1  GENERAL DESCRIPTION

1.2   FEATURES

1.3  GENERAL DESCRIPTION

Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Bytepage and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read outat 30ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificationand margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0D′s extended reliability by providingECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0D is an optimum solution for large nonvolatilestorage applications such as solid state file storage and other portable app.lications requiring non-volatility.  

Part NumberVcc RangeOrganization

PKG TypeK9F1G08U0D-S2.7V  ~ 3.6Vx8TSOP1K9F1G08U0D-H

2.7V  ~ 3.6V

x8

63FBGA

• Voltage Supply

   - 3.3V Device(K9F1G08U0D) : 2.7V ~ 3.6V • Organization

 - Memory Cell Array : (128M + 4M) x 8bit  - Data Register :  (2K + 64) x 8bit • Automatic Program and Erase  - Page Program :  (2K + 64)Byte  - Block Erase :  (128K + 4K)Byte• Page Read Operation

 - Page Size :  (2K + 64)Byte  - Random Read :35μs(Max.)  - Serial  Access : 30ns(Min.)

• Fast Write Cycle Time

 - Page Program time : 250μs(Typ.)  - Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port• Hardware Data Protection

 - Program/Erase Lockout During Power Transitions• Reliable CMOS Floating-Gate Technology

 -Endurance & Data Retention : Refor to the gualification report  -ECC regnirement : 1 bit / 528bytes• Command Driven Operation

• Unique ID for Copyright Protection• Package :

    - K9F1G08U0D-SCB0/SIB0 : Pb-FREE PACKAGE       48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

    - K9F1G08U0D-HCB0/HIB0 : Pb-FREE PACKAGE       63 FBGA (9 x 11 / 0.8 mm pitch)




联系方式

企业名:深圳市益田欣电子科技有限公司

类型:经销商

电话: 0755-83031455

手机:13751177539

联系人:陈小姐

QQ: QQ:3052289727

邮箱:454387222@qq.com

地址:广东深圳福田区华强电子世界一号楼二楼11C059

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