TMPV7502XBG
PLFBGA324
DDR2-SDRAM,SRAM,ROM,NOR闪存
6-18
266.7
企业名:深圳市鼎胜鑫电子科技有限公司
类型:贸易/代理/分销
电话: 075533376936
手机:13826548460
联系人:Sybil
邮箱:Sybil_yao@163.com
地址:广东深圳深圳市福田区振华路深纺大厦C座二楼E26室
Write/Erase Endurance
Write/Erase endurance failures may occur in a cell, page, or block, and are detected by doing a status read
after either an auto program or auto block erase operation. The cumulative bad block count will increase
along with the number of write/erase cycles.
Write/Erase
Cycle
[Cycles]
Cumulative Block
Failure Rate
[%]
50,000 Less than 0.04
• Data Retention
The data in memory may change after a certain amount of storage time. This is due to charge loss or charge
gain. After block erasure and reprogramming, the block may become usable again.
Here are the combined characteristics of Write/Erase Endurance and Data Retention.
Write/Erase
Cycles
[Cycles]
Estimated Data
Retention
[Years]
Initial
(less than 100)
10
5,000 10
10,000 5
50,000 1
(Note) Conditions for estimated data retention :
- Vdd = 1.8V , Ta = 40℃, 8 bit ECC for 512 bytes
- For BENAND TM 8 bit ECC for 512 bytes is executed internally.
- Cumulative failure rate : max 1,000 ppm
- The 1,000 ppm above is the device failure rate when one or more 512 byte areas become
uncorrectable.
企业名:深圳市鼎胜鑫电子科技有限公司
类型:贸易/代理/分销
电话: 075533376936
手机:13826548460
联系人:Sybil
邮箱:Sybil_yao@163.com
地址:广东深圳深圳市福田区振华路深纺大厦C座二楼E26室
友情链接: 深圳市元东发电子有限公司