供应贴片MOS管 AO3415 AF9T SOT-23 国产 无铅环保型 卷带编带包装 小功率

AO3415

P-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = -20V

ID = -4 A

RDS(ON)

< 45mΩ (VGS = -4.5V)

RDS(ON) < 54mΩ (VGS = -2.5V)

RDS(ON) < 75mΩ (VGS = -1.8V)

General Description

The AO3415 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. AO3415 is Pb-free (meets ROHS & Sony

259 specifications). AO3415 is a Green Product

ordering option. AO3415 is  electrically identical.

D

G  G

TO-236

(SOT-23)

Top View

企业名：深圳市索维兴业电子有限公司

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