是
ISC
BU932RP
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 450 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current | 15 | A |
ICM | Collector Current-peak | 30 | A |
IB | Base Current | 1 | A |
IBM | Base Current-peak | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 125 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -40~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance, Junction to Case | 1.0 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A; IB= 0; L= 10mH | 450 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8 A; IB= 150mA |
|
| 1.8 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8 A; IB= 150mA |
|
| 2.2 | V |
ICES | Collector Cutoff Current | VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ |
|
| 1.0 5.0 | mA |
ICEO | Collector Cutoff Current | VCE= 450V;IB= 0 |
|
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 50 | mA |
hFE | DC Current Gain | IC= 5A; VCE= 10V | 300 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 10A |
|
| 2.8 | V |
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号