无锡固电ISC 供应2N6530三极管

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DESCRIPTION

·High DC Current Gain-

: h_FE= 1000(Min.)@I_C= 5A

·Collector-Emitter Sustaining Voltage-

:V_CEO(SUS)= 80V(Min.)

·LowCollector-Emitter Saturation Voltage-

: V_CE(sat)= 2.0V(Max.)@I_C= 5A

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	80	V
V_CER	Collector-Emitter Voltage R_BE= 100Ω	80	V
V_CEV	Collector-Emitter Voltage V_BE= -1.5V	80	V
V_CEO	Collector-Emitter Voltage	80	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current	8	A
I_CM	Collector Current-peak	15	A
I_B	Base Current	250	mA
P_C	Collector Power Dissipation @T_C=25℃	65	W
T_j	Junction Temperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance, Junction to Case	1.92	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 200mA; I_B= 0	80			V
V_CER(SUS)	Collector-Emitter Sustaining Voltage	I_C= 200mA;R_BE= 100Ω	80			V
V_CEV(SUS)	Collector-Emitter Sustaining Voltage	I_C= 200mA;V_BE= -1.5V	80			V
V_CE_(sat)-1	Collector-Emitter Saturation Voltage	I_C= 5A; I_B= 10mA			2.0	V
V_CE_(sat)-2	Collector-Emitter Saturation Voltage	I_C= 8A; I_B= 80mA			3.0	V
V_BE_(on)-1	Base-Emitter On Voltage	I_C= 5A; V_CE= 3V			2.8	V
V_BE_(on)-2	Base-Emitter On Voltage	I_C= 8A ; V_CE= 3V			4.5	V
I_CEV	Collector Cutoff Current	V_CE= 80V;V_BE= -1.5V V_CE= 80V;V_BE= -1.5V;T_C= 125℃			0.5 5.0	mA
I_CEO	Collector Cutoff Current	V_CE= 80V; I_B= 0			1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= 5V; I_C= 0			5	mA
h_FE-1	DC Current Gain	I_C= 5A; V_CE= 3V	1000		10000
h_FE-2	DC Current Gain	I_C= 8A ; V_CE= 3V	100		5000
C_OB	Output Capacitance	V_CB= 10V;I_E= 0; f= 1MHz			200	pF