DESCRIPTION                                             

·DC Current Gain-

: h_FE= 30-90@I_C= 5A

·Wide Area of Safe Operation

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 80V(Min)

·Complement to Type 2N5623

 

APPLICATIONS

·Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

 

 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	100	V
VCEO	Collector-Emitter Voltage	80	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current-Continuous	10	A
PC	Collector Power Dissipation@TC=25℃	100	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature	-65~150	℃

 

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	1.5	℃/W

 

ELECTRICAL CHARACTERISTICS

 

T_C=25℃unless otherwise specified

 

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= 50mA ; IB= 0	80		V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 10A; IB= 1A		1.5	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 10A; IB= 1A		2.2	V
ICEO	Collector Cutoff Current	VCE= 80V; IB= 0		1.0	mA
ICBO	Collector Cutoff Current	VCB= 100V; IE= 0		0.1	mA
IEBO	Emitter Cutoff Current	VEB= 6V; IC= 0		0.1	mA
hFE	DC Current Gain	IC= 5A ; VCE= 5V	30	90
fT	Current-Gain—Bandwidth Product	IC= 1A ; VCE= 10V	40		MHz

 

 

 

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