DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

  : V_(BR)CEO= 120V(Min)

·Good Linearity of h_FE

·Complement to Type 2SB688

 

 

APPLICATIONS

·Audio frequency power amplifier applications

·Recommend for 45-50W audio frequency amplifier

  output stage applications

 

 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	120	V
VCEO	Collector-Emitter Voltage	120	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	8	A
IB	Base Current-Continuous	0.8	A
PC	Collector Power Dissipation @ TC=25℃	80	W
TJ	JunctionTemperature	150	℃
Tstg	StorageTemperature Range	-55~150	℃

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 50mA ; IB= 0	120			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 5.0A; IB= 0.5A			2.5	V
VBE(on)	Base-Emitter On Voltage	IC= 5A ; VCE= 5V			1.5	V
ICBO	Collector Cutoff Current	VCB= 120V ; IE= 0			10	μA
IEBO	Emitter Cutoff Current	VEB= 5V; IC= 0			10	μA
hFE	DC Current Gain	IC= 1A ; VCE= 5V	55		160
COB	Output Capacitance	IE= 0; VCB= 10V;ftest= 1.0MHz		170		pF
fT	Current-Gain—Bandwidth Product	IC= 1A; VCE= 5V;ftest= 1.0MHz		12		MHz

 

u      h_FEClassifications

R	O
55-110	80-160

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类型：生产制造商

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