无锡固电ISC供应2N5609三极管

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DESCRIPTION

·DC Current Gain-

: h_FE= 70-200@I_C= -2.5A

·Wide Area of Safe Operation

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -80V(Min)

·Complement to Type 2N5610

APPLICATIONS

·Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-100	V
V_CEO	Collector-Emitter Voltage	-80	V
V_EBO	Emitter-Base Voltage	-6	V
I_C	Collector Current-Continuous	-5	A
P_C	Collector Power Dissipation@T_C=25℃	25	W
T_J	Junction Temperature	150	℃
T_stg	Storage Temperature	-65~150	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	6.0	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= -50mA ; I_B= 0	-80		V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= -2.5A; I_B= -0.25A		-0.75	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= -2.5A; I_B= -0.25A		-1.45	V
I_CEO	Collector Cutoff Current	V_CE= -80V; I_B= 0		-1.0	mA
I_CBO	Collector Cutoff Current	V_CB= -100V; I_E= 0		-0.1	mA
I_EBO	Emitter Cutoff Current	V_EB= -6V; I_C= 0		-0.1	mA
h_FE	DC Current Gain	I_C= -2.5A ; V_CE= -5V	70	200
f_T	Current-Gain—Bandwidth Product	I_C= -0.5A ; V_CE= -10V	50		MHz