TLP291(GR-TP,SE

晶体管输出光电耦合器 50mA 80V Gen Purp 50mA 1 Circuit

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP291(GR-TP,SE TLP291(SE consists of photo transistor optically coupled to a gallium arsenide infrared emitting diode.

TLP291(GR-TP,SE TLP291(SE is housed in the SO4 package, very small and thin coupler. Since TLP291(SE is guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio : 50% (min)

 Rank GB : 100% (min)

 Isolation Voltage : 3750 Vrms (min)

 Operation temperature: -55 to 110 ˚C 

 UL recognized : UL1577, File No. E67349

 cUL approved : CSA Component Acceptance Service No.5A, File No. E67349

 SEMKO conformity : EN 60065: 2002,

EN 60950-1: 2001, EN 60335-1: 2002,

 BSI conformity : BS EN 60065: 2002,

 BS EN 60950-1: 2006

 VDE conformity: EN 60747-5-5

Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25°C) TLP291(GR-TP,SE

Current Transfer Ratio (%)   (IC / IF)  IF = 5 mA, VCE = 5 V, Ta = 25°C TYPE Classification  (Note1)  Min Max  Marking of Classification  Blank 50 600 Blank, YE, GR, GB, BL, Y+, G, G+,B  Rank Y 50 150 YE  Rank GR 100 300 GR  Rank GB 100 600 GB  Rank BL 200 600 BL  Rank YH 75 150 Y+  Rank GRL 100 200 G  Rank GRH 150 300 G+  TLP291  Rank BLL 200 400 B

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