: RF JFET Transistors
: N-Channel
: 14.5 dB
: 12.5 W
: 120 V
: 2 GHz to 6 GHz
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
CGH40010F
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-6.0GHz, 10 Watt
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages.
FEATURES CGH40010F
• Up to 6 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical PSAT
• 65 % Efficiency at PSAT
• 28 V Operation
APPLICATIONS CGH40010F
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
型号: CGH40010F
制造商: Cree, Inc.
产品种类: 射频结栅场效应晶体管(RF JFET)晶体管
RoHS: 无铅环保
晶体管类型: HEMT
技术: GaN
增益: 14.5 dB
晶体管极性: N-Channel
Vds-漏源极击穿电压: 120 V
Vgs-栅源极击穿电压 : - 10 V to 2 V
Id-连续漏极电流: 1.5 A
输出功率: 12.5 W
漏极/栅极电压: -
工作温度: - 40 C
工作温度: + 150 C
Pd-功率耗散: -
安装风格: Screw Mount
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室