供应K8P3215UQB-DI4B,原装现货。

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32M Bit (2M x16) Page Mode / Multi-Bank NOR Flash Memory

ORDERING INFORMATION

K8 P 32 15 U Q B - P E 4 A

Samsung

NOR Flash Memory

Device Type

Page Mode

Density & Bank Architecture

32 Mbits & 4 Banks

Operating Temperature Range

C = Commercial Temp. (0 °C to 70 °C)

I = Industrial Temp. (-40 °C to 85 °C)

E = Extended Temp. (-25 °C to 85 °C)

Block Architecture

Q = Top and Bottom Boot Block

Version

3th Generation

Access Time

4A = 55ns/20ns

4B = 60ns/25ns

4C = 65ns/25ns

4D = 70ns/30ns

Operating Voltage Range

2.7V to 3.6V

Package

P = TSOP1(Lead Free), D = FBGA(Lead Free)

E = FBGA(Lead Free, 1.0mm ball pitch)

Organization

x16

Table 2. K8P3215UQB DEVICE BANK DIVISIONS

Bank 0, Bank 3 Bank 1, Bank 2

Mbit Block Sizes Mbit Block Sizes

4 Mbit 4 Kw x 8 and

32 Kw x 7 12 Mbit 32 Kw x 24

Table 3. OTP BLOCK

After entering

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