The HMC326MS8G & HMC326MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC driver amplifiers which

operate between 3.0 and 4.5 GHz. The amplifier

is packaged in a low cost, surface mount 8 leaded

package with an exposed base for improved RF and

thermal performance. The amplifier provides 21 dB

of gain and +26 dBm of saturated power from a +5V

supply voltage. Power down capability is available to

conserve current consumption when the amplifier is

not in use. Internal circuit matching was optimized to

provide greater than 40% PAE.

HMC326MS8GETR  射频放大器HMC326MS8GETR  射频放大器HMC326MS8GETR  射频放大器

企业名：深圳市创达佳科技有限公司

类型：贸易/代理/分销

电话： 0755-83006912

手机：13510721991

联系人：卢先生

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地址：广东深圳深圳市福田区深南中路2070号电子科技大厦27楼2708