特性：

• 极高增益
• 丰富的产品组合
• 低噪声
• 低电流消耗
• 封装
• 更方便的散热 - 通过散热铅
• 广泛的封装选择

目标应用：

• 移动电话 ODM/CEM 设计
• 无绳电话
• 胎压监测系统
• 调谐器
• GPS接收器；卫星LNB、机顶盒、多开关盒

1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.7 dB at 900 MHz  Maximum stable gain 21.5 dB at 900 MHz  11 GHz fT silicon technology 1.3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.4 Quick reference data BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCB collector-base voltage open emitter - - 24 V VCE collector-emitter voltage open base - - 12 V shorted base - - 24 V VEB emitter-base voltage open collector - - 2 V IC collector current - 15 50 mA Ptot total power dissipation Tsp  87 C [1] - - 450 mW hFE DC current gain IC = 15 mA; VCE =8V 60 95 200 Cc collector capacitance VCB = 8 V; f = 1 MHz - 0.41 - pF fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz