FQU2N60C

FQD2N60C / FQU2N60C

N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω

Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,

ID = 0.95 A

• Low Gate Charge (Typ. 8.5 nC) This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced• Low Crss (Typ. 4.3 pF) MOSFET technology has been especially tailored to reduce

• 100% Avalanche Tested on-state resistance, and to provide superior switching

• RoHS Compliant performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

active power factor correction (PFC), and electronic lamp

ballasts.

企业名：深圳市冠亚通电子科技有限公司

类型：贸易/代理/分销

电话： 0755-82584853

手机：13692104516

联系人：易小姐 辛先生 兰先生 周先生

QQ：

邮箱：szguanyatong88@163.com

地址：广东深圳深圳市福田区华强北路深纺大厦A座903