供应MMBT3904 1AM 三极管 2N3904贴片 NPN SOT-23

MMBT3904 TRANSISTOR (NPN) FEATURES z As complementary type the PNP 

transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 

MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 

Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC 

Collector Current -Continuous 200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance 

Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃

 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter 

Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10μA, IE=0 60 V 

Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage VEBO

 IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEX 

VCE=30V,VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, 

IC=10mA 100 400 DC current gain hFE(2) VCE=1V, IC= 50mA 60 hFE(3) VCE=1V, IC= 100mA 30 

Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage

 VBE(sat) IC= 50mA, IB= 5mA 0.95 V Transition frequency fT VCE=20V, IC=10mA,f=100MHz 300 MHz

 Delay Time td 35 nS Rise Time tr VCC=3V,VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS Storage 

Time ts 200 nS Fall Time tf VCC=3V,IC=10mA, IB1=-IB2=1mA 50 nS CLASSIFICATION OF hFE(1) 

Rank O Y G Range -400 

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