EL6N136

EL6N136

EL6N136

EL6N136

Features

•High speed 1Mbit/s

• High isolation voltage between input

and output (Viso=5000 Vrms )

•Guaranteed performance from 0°C to 70°C

•Wide operating temperature range of -55°C to 100°C

•Pb free and RoHS compliant

•UL and cUL approved(No. E214129)

• VDE approved (No. 132249)

• SEMKO approved

• NEMKO approved

• DEMKO approved

• FIMKO approved

Description

The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high

speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase

the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector

capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead

spacing and SMD option

Applications

• Line receivers

• Telecommunication equipments

•Power transistor isolation in motor drives

•Replacement for low speed phototransistor photo couplers

•Feedback loop in switch-mode power supplies

• Home appliances

• High speed logic ground isolation

企业名：深圳市华之电科技有限公司

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