型号：2SC4793 2SC4793 2SC4793 2SC4793 2SC4793 2SC4793
厂家：TOSHIBA
描述：Silicon NPN Power Transistors 
类别：分离式半导体产品
家庭：晶体管(BJT) - 单路

晶体管类型：NPN
电流 - 集电极 (Ic)（）：1A
电压 - 集电极发射极击穿（）：230V
Ib、Ic条件下的Vce饱和度（）：1.5V @ 50mA，500mA
电流 - 集电极截止（）：-
在某 Ic、Vce 时的直流电流增益 (hFE)：100 @ 100mA，5V
功率 - ：2W
频率 - 转换：100MHz
安装类型：通孔
封装/外壳：TO-220-3 整包
供应商设备封装：TO-220NIS
包装：管件
标准包装：50
数量：11850

单价：面议

For Muting and Switching Applications

• High emitter-base voltage: VEBO = 25 V (min)

• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)

• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

• High DC current gain: hFE = 200 to 1200

• Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 50 V

Collector-emitter voltage VCEO 20 V

Emitter-base voltage VEBO 25 V

Collector current IC 300 mA

Base current IB 60 mA

Collector power dissipation PC 150 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc)

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