AO3403/A03403

P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free
(meets ROHS & Sony 259 specifications). AO3403L is a Green Product ordering option. 

AO3403 and AO3403L are electrically identical.

Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130mΩ (VGS = -10V)
RDS(ON) < 180mΩ (VGS = -4.5V)
RDS(ON) < 260mΩ (VGS = -2.5V)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter	Symbol	Maximum	Units
Drain-Source Voltage	VDS	-30	V
Gate-Source Voltage	VGS	±12	V
Continuous Drain Current       TA=25°C                                               TA=70°C	ID	-2.6 -2.2	A
Pulsed Drain Current	IDM	-20	A
Power Dissipation                    TA=25°C                                                TA=70°C	PD	1.4 1	W
Junction and Storage Temperature Range	TJ, TSTG	-55 to 150	°C

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