The NCE3010S uses advanced trench technology and
design to provide excellent R DS(ON) with low gate charge. It

can be used in a wide variety of applications.

V DS =30V,I D =10A
R DS(ON) < 12mΩ @ V GS =10V
R DS(ON) <16mΩ @ V GS =4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply

企业名：深圳市世新微电子有限公司

类型：

电话： 0755-83282351

手机：18018797325

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地址：广东深圳深圳市福田区车公庙天展大厦CD座6层6D-7