HGTG5N120BND
ON(安森美)
TO247
17+
企业名:深圳市尚想信息技术有限公司
类型:贸易/代理/分销
电话:
0755-83948880
0755-8398880
手机:15323892334
18182115682
联系人:姚小姐/邓小姐
微信:
邮箱:assistant@sunshineic.com
地址:广东深圳福田区振兴路上步工业区405栋6楼603室
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306.
企业名:深圳市尚想信息技术有限公司
类型:贸易/代理/分销
电话:
0755-83948880
0755-8398880
手机:15323892334
18182115682
联系人:姚小姐/邓小姐
微信:
邮箱:assistant@sunshineic.com
地址:广东深圳福田区振兴路上步工业区405栋6楼603室