FQP12N60C/FQPF12N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

企业名：深圳市广辉电子有限公司

类型：

电话： 13686868407

手机：13686868407

联系人：陈树辉

QQ：

微信：

邮箱：659974144@qq.com

地址：广东深圳深圳市深南东路金城大厦3-10-A//柜台:深圳市华强北路新华强电子世界Q3B026室