是
isc/iscsemi
2SB772
放大
硅(Si)
PNP型
-3(A)
10(W)
80(MHz)
平面型
TO-126
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
供应2SB772三极管 TO-126有意者联系!
DESCRIPTION
·High Collector Current -IC= -3A
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min)
·Good Linearity of hFE
·LowSaturation Voltage
·Complement to Type 2SD882
APPLICATIONS
·Designed for use in the output stage of 3 watts audio amp-
lifier, voltage regulator, DC-DC converter and relay driver.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -30 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -3 | A |
ICP | Collector Current-Pulse | -7 | A |
PC | Collector Power Dissipation @ TC=25℃ | 10 | W |
Collector Power Dissipation @ Ta=25℃ | 1 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -30V; IE= 0 |
|
| -1.0 | μA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -1.0 | μA |
hFE-1 | DC Current Gain | IC= -20mA ; VCE= -2V | 30 |
|
|
|
hFE-2 | DC Current Gain | IC= -1A ; VCE= -2V | 60 |
| 400 |
|
fT | Current-Gain—Bandwidth Product | IC= -0.1A ; VCE= -5V |
| 80 |
| MHz |
COB | Output Capacitance | IE=0; VCB= -10V, ftest= 1MHz |
| 55 |
| pF |
u hFE-2Classifications
R | Q | P | E |
60-120 | 100-200 | 160-320 | 200-400 |
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号