DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
北京京瑞馨科技—供应全新原装射频模块、射频管！假一罚十！！！
全新原装供应：
三菱（MITSUBISHI）:
RD100HHF1、RD70HVF1、RD70HHF1、RD60HUF1、RD45HMF1、RD30HUF1、
RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、
RD09MUP2、RD07MVS1B、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、
RD05MMP1、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD01MUS2、
RD00HHS1、RD00HVS1等RD系列；
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H1317M1A、RA60H1317M、RA55H4452M，
RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、
RA45H4452M、RA45H4045MR、RA45H4047M、RA35H1516M、RA33H1516M
RA30H4452M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、
RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、
RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、
RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、
RA08N1317M、RA07H4452M、RA07M4452MSA、RA07M4452M、RA07N4452M、
RA07H4047M、RA07M4047MSA、RA07M4047M、RA07N4047M、RA07M3843M、
RA07M3340M、RA07H3340M、RA07N3340M、RA07M2127M、RA07M1317MSA、
RA07M1317M、RA07H06068M、RA07M0608M、RA06H8285M、RA05H9595M、
RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、
RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、
RA01L8693MA等RA系列；
东芝（TOSHIBA）：
2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、
2SK3475(TE12L,Q)、2SK3476(TE12L,Q)、2SK3756(TE12L,Q)、
2SK4037(TE12L,Q)、2SC5066-Y(T5L,F,T)(M2)等2SC、2SK系列；
瑞萨（RENESAS）：
RQA0001DNS、RQA0002DNS,RQA0003DNS、RQA0004LXAQS、
RQA0005MXAQS、RQA0005QXDQS、RQA0008NXAQS、
RQA0009SXAQS、RQA0010UXAQS、RQA0010VXDQS、
RQA0011DNS、RQA0014XXAQS,RQA0014XXDQS等RQA系列；
M62363FP#TF0G、M3062LFGPGP#U3C、M3062LFGPGP#U5C等M系列
ST：
PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
P0300ECL、P0300ECLRP1、P0720ECL等P系列
有用到的，都可以与我联系，全新原装，优势供应！
