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BULD39D-1 电 特 性 - 参 数

名称: BULD39D-1

BULD39D-1 PDF资料

材料: Si

结构: NPN

耗散功率 (Pc):

集电极 -- 基极击穿电压 (Ucb): 850V

集电极 -- 发射极击穿电压 (Uce): 450V

发射极 -- 基极击穿电压 (Ueb):

集电极电流 (Ic max): 4A

结温 (Tj):

特征频率 (ft):

集电极电容 (Cc), Pf:

直流电流增益 (hFE), min/max: 4MIN

制造商: STMicroelectronics

: IPAK

等效晶体管为 BULD39D-1

应用: high voltage power bipolar transistor

另见晶体管数据表:BULD741,BULD742C,BULK128D-B,BUT30V,BUT70W,BUTW92,BUXD87,D44H11FP,D45H11FP,HD1530FX,HD1530JL,HD1750JL,MD2001FX,MD2103DFP,MJD45H11T4-A,ST13007D,ST1510FX,ST901T,STBV45,STD1805,STD826,STF724,STF826,STL73,STN724,STN817A,STN9260,STPSA42,STT818B,STX616,STX817A,STX83003,TIP35CP,TR236,BC856U,BC818K-40,BCM846S,SMBT3906,2SA1015(L),2SC2458(L),2SC4738F,2SC5376F,2SC6026CT,2SC6132,TTC4116FU,HN1A02F,HN1A26FS,HN1C03F,HN1C05FE,HN2A01FU,HN2C01FE,HN4A08J,RN1101FS,RN1102CT,RN1102MFV,RN1103FS,RN1104MFV,RN1105ACT,RN1107ACT,RN1108CT,RN1109FS,RN1110MFV