KF3002
KF
SOT-23-3
全新原装
20V
±8V
3A
29mΩ
企业名:深圳市亿创微芯电子有限公司
类型:
电话: 0755-83538626
手机:15815503065
联系人:李娜娜
微信:
邮箱:elemchip@126.com
地址:广东深圳中国 广东 深圳市民治东边大厦701-702
KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
FEATURES
20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A
Ros(ON) =36mQ@ Vcs=2.5V, lo=2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
Application
Battery management
High speed switch
Low power DC to DC converter
KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
FEATURES
20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A
Ros(ON) =36mQ@ Vcs=2.5V, lo=2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
Application
Battery management
High speed switch
Low power DC to DC converter
KF3002M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
FEATURES
20V/3A: Ros(oN) =29mQ@ Vas=4.5V, lp=3A
Ros(ON) =36mQ@ Vcs=2.5V, lo=2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23-3L
Application
Battery management
High speed switch
Low power DC to DC converter
N沟道场效应管IC
N沟道场效应管IC
N沟道场效应管IC N沟道场效应管IC
企业名:深圳市亿创微芯电子有限公司
类型:
电话: 0755-83538626
手机:15815503065
联系人:李娜娜
微信:
邮箱:elemchip@126.com
地址:广东深圳中国 广东 深圳市民治东边大厦701-702