单 P-沟道 55 V 0.11 Ohm 32 nC HEXFET® 功率 Mosfet - TO-252-3

属性Attributes TableFet TypeP-ChNo of Channels1Drain-to-Source Voltage [Vdss]55VDrain-Source On Resistance-Max0.11ΩRated Power Dissipation57WQg Gate Charge32nCGate-Source Voltage-Max [Vgss]20VDrain Current18ATurn-on Delay Time12nsTurn-off Delay Time20nsRise Time28nsFall Time16nsOperating Temp Range-55°C to +150°CGate Source Threshold4VTechnologySiHeight - Max2.39mmLength6.73mmInput Capacitance650p

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