原装W29N01HVSINA  NAND FLASH

1G-BIT 3.3V  NAND FLASH MEMORY

 

原装W29N01HVSINA  NAND FLASH的技术参数：

商品目录 NAND FLASH

存储器类型 Non-Volatile

存储器构架(格式) FLASH

技术 NAND Flash

存储器容量 1Gb (128M x 8)

写周期时间（页） 250us

存储器接口类型 Parallel

工作电压 2.7V ~ 3.6V

工作温度 -40℃~85℃

 

原装W29N01HVSINA  NAND FLASH的一般描述

The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems with

limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing

media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power

supply with active current consumption as low as 25mA 10uA for CMOS standby current.

The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes.

Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes

for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for

error management functions).

The W29N01HV supports the standard NAND flash memory interface using the multiplexed 8-bit bus to

transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and

#WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write

Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

企业名：深圳市迅丰达电子科技有限公司

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