TC58NVG0S3ETAI0 原装 NAND FLASH

闪存 1 Gbyte并行接口 TSOP封装  48引脚   NAND

闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。

1 GBIT (128M × 8 BIT) CMOS NAND E2 PROM

 

TC58NVG0S3ETAI0 原装 NAND FLASH的技术参数：

储器大小	1 Gbyte
接口类型	并行
封装类型	TSOP
引脚数目	48
组织	128M x 8
安装类型	表面贴装
单元类型	NAND
工作电源电压	-0.6 V ~ 4.6 V
安装风格	SMD/SMT
工作温度	-40 ~ 85°C
封装	Tray
产品类型	NAND Flash
速度	25 ns
块组织	对称

 

 

TC58NVG0S3ETAI0 原装 NAND FLASH的描述：

The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.

 

The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

 

 The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.

 

 The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

 

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