MT29F64G08CBABAWP 原装 NAND FLASH

 

特征:

• Open NAND Flash Interface (ONFI) 2.3-compliant1

• Multiple-level cell (MLC) technology

• Organization

– Page size x8: 8936 bytes (8192 + 744 bytes)

– Block size: 256 pages (2048K + 186K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 64Gb: 4096 blocks;

128Gb: 8192 blocks;

256Gb: 16,384 blocks;

512Gb: 32,786 blocks

• Synchronous I/O performance

– Up to synchronous timing mode 52

– Clock rate: 10ns (DDR)

– Read/write throughput per pin: 200 MT/s

• Asynchronous I/O performance

– Up to asynchronous timing mode 5

– tRC/tWC: 20ns (MIN)

• Array performance

– Read page: 75μs (MAX)

– Program page: 1300μs (TYP)

– Erase block: 3ms (TYP)

• Operating Voltage Range

– VCC: 2.7–3.6V

– VCCQ: 1.7–1.95V, 2.7–3.6V

• Command set: ONFI NAND Flash Protocol

• Advanced Command Set

– Program cache

– Read cache sequential

– Read cache random

– One-time programmable (OTP) mode

– Multi-plane commands

– Multi-LUN operations

– Read unique ID

– Copyback

• First block (block address 00h) is valid when ship

ped from factory. For minimum required ECC, see

Error Management (page 117).

• RESET (FFh) required as first command after power-on

• Operation status byte provides software method for

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous

interface

• Copyback operations supported within the plane

from which data is read

• Quality and reliability

– Data retention: JESD47 compliant; see qualification report

– Endurance: 3000 PROGRAM/ERASE cycles

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40oC to +85oC

• Package

– 48-pin TSOP

– 100-ball BGA

MT29F64G08CBABAWP  原装NAND FLASH 的技术参数：

制造商	Micron Technology
技术	NAND Flash memory
容量	64 GB
温度规格	0C to +70C
外包装	Tape & Reel (TR)
RoHs Status	Lead free/RoHS Compliant
封装/外壳	TSOP

 

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