W25N01GVZEIGS 原装 NAND FLASH

3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ

W25N01GV is offered in an 8-pad WSON 8x6-mm (package code ZE), a 16-pin SOIC 300-mil (package code SF), and two 24-ball 8x6-mm TFBGA (package code TB & TC) packages as shown in Figure 1a-c respectively. Package diagrams and dimensions are illustrated at the end of this datasheet.

 

W25N01GVZEIGS 原装 NAND FLASH 的技术参数：

制造商	Winbond
产品种类	NOR闪存
商标	Winbond
产品类型	NOR Flash
子类别	Memory & Data Storage
封装	WSON-8-EP(6.1x8)

 

 W25N01GVZEIGS 原装 NAND FLASH 的描述：

The W25N01GV (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data.

 

The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 25mA active and 10μA for standby. All W25N SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for the typical NAND flash memory. The W25N01GV 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each.

 

The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages can be erased in groups of 64 (128KB block erase). The W25N01GV has 1,024 erasable blocks. The W25N01GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD).

 

SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. The W25N01GV provides a new Continuous Read Mode that allows for efficient access to the entire memory array with a single Read command. This feature is ideal for code shadowing applications.

 

 A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash memory manageability, user configurable internal ECC, bad block management are also available in W25N01GV.

 

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