isc/iscsemi/2SD718
功率
大功率
中频
NPN型
TO-3PI
塑料封装
8(A)
80(W)
厂家直销
热销
平面型
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)·Good Linearity of hFE·Complement to Type 2SB688
APPLICATIONS·Audio frequency power amplifier applications·Recommend for 45-50W audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
120VVCEOCollector-Emitter Voltage
120VVEBOEmitter-Base Voltage5VICCollector Current-Continuous8AIBBase Current-Continuous0.8APCCollector Power Dissipation@ TC=25℃80WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA ; IB= 0120
VVCE(sat)Collector-Emitter Saturation VoltageIC=
5.0A; IB= 0.5A
2.5VVBE(on)Base-Emitter On VoltageIC= 5A ; VCE= 5V
1.5VICBOCollector Cutoff CurrentVCB= 120V ; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0
10μAhFEDC Current GainIC= 1A ; VCE= 5V55 160 COBOutput CapacitanceIE= 0; VCB= 10V;ftest=
1.0MHz 170 pFfTCurrent-Gain—Bandwidth ProductIC= 1A; VCE= 5V;ftest=
1.0MHz 12 MHz u
hFEClassificationsRO55-11080-160
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号