无锡固电ISC 供应2N6754三极管

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DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 500(Min.)

·High Switching Speed

·Low Collector Saturation Voltage

·Wide Area of Safe Operation

APPLICATIONS

·Off-line power supplies

·High-voltage inverters

·Switching regulators

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
V_CEV	Collector-Emitter Voltage	1000	V
V_CEX(SUS)	Collector-Emitter Voltage	550	V
V_CEO(SUS)	Collector-Emitter Voltage	500	V
V_EBO	Emitter-Base Voltage	8	V
I_C	Collector Current-Continuous	10	A
I_CM	Collector Current-Peak	10	A
I_B	Base Current-Continuous	5	A
P_C	Collector Power Dissipation@T_C=25℃	150	W
T_J	Junction Temperature	175	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	1.0	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 200mA; I_B= 0	500		V
V_CE_(sat)-₁	Collector-Emitter Saturation Voltage	I_C= 5A; I_B= 1A		1.0	V
V_CE_(sat)-₂	Collector-Emitter Saturation Voltage	I_C= 10A; I_B= 3A		3.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 5A; I_B= 1A		1.3	V
I_CEV	Collector Cutoff Current	V_CE= 1000V; V_BE= -1.5V V_CE= 1000V; V_BE= -1.5V; T_C=100℃		0.1 1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= 8V; I_C= 0		2.0	mA
h_FE	DC Current Gain	I_C= 5A ; V_CE= 3V	8	40
f_T	Current Gain-Bandwidth Product	I_C= 0.2A ; V_CE= 10V	15	60	MHz
C_OB	Output Capacitance	I_E= 0; V_CB= 10V; f= 0.1MHz	50	250	pF
Switching times-Resistive Load
t_d	Delay Time	I_C= 5A; I_B1= -I_B2= 1A; V_CC= 250V; V_BE= -6V; t_p= 20μs		0.1	μs
t_r	Rise Time			0.4	μs
t_s	Storage Time			3.0	μs
t_f	Fall Time			0.4	μs