无锡固电ISC 供应2N6438三极管

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DESCRIPTION

·Collector-Emitter Sustaining Voltage-

:V_CEO(SUS)= -120V(Min)

·High DC Current Gain-

: hFE= 20-80@I_C= -10A

·Low Saturation Voltage-

: V_CE(_sat)= -1.0V(Max)@ I_C= -10A

·Complement to Type 2N6340

APPLICATIONS

·Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-140	V
V_CEO	Collector-Emitter Voltage	-120	V
V_EBO	Emitter-Base Voltage	-6	V
I_C	Collector Current-Continuous	-25	A
I_CM	Collector Current-Peak	-50	A
I_B	Base Current-Continuous	-10	A
P_C	Collector Power Dissipation @T_C=25℃	200	W
T_J	Junction Temperature	200	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	0.875	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= -50mA ; I_B= 0	-120		V
V_CE_(sat)_-1	Collector-Emitter Saturation Voltage	I_C= -10A; I_B= -1A		-1.0	V
V_CE_(sat)_-2	Collector-Emitter Saturation Voltage	I_C= -25A; I_B= -2.5A		-1.8	V
V_BE_(sat)_-1	Base-Emitter Saturation Voltage	I_C= -10A; I_B= -1A		-1.8	V
V_BE_(sat)_-2	Base-Emitter Saturation Voltage	I_C= -25A; I_B= -2.5A		-2.5	V
I_CEO	Collector Cutoff Current	V_CE= -60V; I_B= 0		-50	μA
I_CBO	Collector Cutoff Current	V_CB= -140V; I_E= 0		-10	μA
I_EBO	Emitter Cutoff Current	V_EB= -6V; I_C= 0		-0.1	mA
h_FE-1	DC Current Gain	I_C= -0.5A ; V_CE= -2V	30
h_FE-2	DC Current Gain	I_C= -10A ; V_CE= -2V	30	120
h_FE-3	DC Current Gain	I_C= -25A ; V_CE= -2V	12
f_T	Current-Gain—Bandwidth Product	I_C= -1A ; V_CE= -10V ;f_test= 10MHz	40		MHz
C_OB	Output Capacitance	I_E= 0; V_CB= -10V ;f_test= 0.1MHz		700	pF
Switching Times
t_r	Rise Time	V_CC= -80V; I_C= -10A; I_B1= -I_B2= -1A, V_BE(_off₎= -6V		0.3	μs
t_stg	Storage Time			2.0	μs
t_f	Fall Time			0.4	μs