EL4N35S(TA)

EL4N35S(TA)

EL4N35S(TA)

EL4N35S(TA)

Features:

• 4N2X series: 4N25, 4N26, 4N27, 4N28

• 4N3X series: 4N35, 4N36, 4N37, 4N38

• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5

• High isolation voltage between input and output

(Viso=5000 V rms)

• Creepage distance >7.62 mm

• Operating temperature up to +110°C

• Compact dual-in-line package

• Pb free and RoHS compliant.

• UL approved (No. E214129)

• VDE approved (No. 132249)

• SEMKO approved

• NEMKO approval

• DEMKO approval

• FIMKO approval

• CSA approved

• CQC approved

Description

The 4N2X, 4N3X, H11AX series of devices each consist of

an infrared emitting diode optically coupled to a phototransistor.

They are packaged in a 6-pin DIP package and available in

wide-lead spacing and SMD option. Schematic

1. Anode

2. Cathode

3. No Connection

4. Emitter

5. Collector

6. Base

Applications

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

EL4N35S(TA)

Option Description Packing quantity

None Standard DIP-6 65 units per tube

M Wide lead bend (0.4 inch spacing) 65 units per tube

S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel

S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel

S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel

S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel

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