类别：分离式半导体产品
家庭：晶体管(BJT) - 单路
系列：-
晶体管类型：PNP
电流 - 集电极 (Ic)（）：3A
电压 - 集电极发射极击穿（）：80V
Ib、Ic条件下的Vce饱和度（）：1.7V @ 600mA，3A
电流 - 集电极截止（）：-
在某 Ic、Vce 时的直流电流增益 (hFE)：50 @ 100mA，1V
功率 - ：12.5W
频率 - 转换：50MHz
安装类型：通孔
封装/外壳：TO-225AA，TO-126-3
供应商设备封装：TO225AA
包装：散装
其它名称：MJE172GOS
标准包装：500
备注：MJE182G/MJE172G是专为低功耗音频放大器和低电流，高速开关应用。

Features

• High DC Current Gain

• High Current−Gain − Bandwidth Product

• Annular Construction for Low Leakages

• Epoxy Meets UL 94 V−0 @ 0.125 in

• These Devices are Pb−Free and are RoHS Compliant*

MJE170G, MJE180G

MJE171G, MJE181G

MJE172G, MJE182G

                  MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)

tr, tf ≤ 10 ns

DUTY CYCLE =1.0%

51RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.1K

The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) < 150°C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperature, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

企业名：深圳市勤思达科技有限公司

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