TO-220 Plastic-Encapsulate Transistors

2SD313 TRANSISTOR (NPN)

FEATUR*
Power dissipation
PCM: 1.75 W (Tamb=25℃)
Collector current
ICM: 3 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100μA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 100 μA
Collector cut-off current ICEO VCE=60V, IE=0 1 mA
Emitter cut-off current IEBO VEB=4V, IC=0 100 μA
hFE(1) VCE=2V, IC=1A 40 320
DC current gain
hFE(2) VCE=2V, IC=0.1A 40
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V
Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V
Transition frequency fT VCE=5V, IC=500mA 8 MHz
Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 65 pF

企业名：深圳市泰兴发电子有限公司

类型：生产企业

电话： 86 0755 61362389

联系人：许惠谦

地址：广东深圳中国广东深圳市福田区赛格广场1B094