在线询价：
否
触发二*管
否
国产
DB3
硅(Si)
-
-
-
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类型：其他
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Absolute Maximum Ratings (Ta= 25 OC) | |||||||||
Parameter | Symbol | Value | Unit | ||||||
Power Dissipation (Ta | = 65 OC) | Ptot | 150 | mW | |||||
RepetitivePeakOn-state Current (tp = 20 µs, f = 100 Hz) | ITRM | 2 | A | ||||||
Operating Junction and Storage Temperature Range | Tj, Tstg | - 40 to + 125 | OC | ||||||
Characteristics at Ta= 25 OC | |||||||||
Parameter | Symbol | Min. | Max. | Unit | |||||
Breakover Voltage at C = 22 nF, see diagram 1 | DB3 | VBO | 28 | 36 | V | ||||
DC34 | 30 | 38 | |||||||
| DB4 |
| 35 | 45 | |||||
Breakover Voltage Symmetry at C = 22 nF, see diagram 1 | [|+VBO|-|-VBO|] | - | 3 | V | |||||
Dynamic Breakover Voltage at ΔI = [IBOto IF = 10 mA] | | | ΔV &plu*n; | | 5 | - | V | ||||
Output Voltage See diagram 2 |
| VO | 5 | - | V | ||||
Breakover Current at C = 22 nF |
| IBO | - | 50 | µA | ||||
Leakage Current at VB= 0.5 VBOmax |
| IB | - | 10 | µA | ||||
Rise Time See diagram 3 |
| tr | - | 2 | µs | ||||
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