NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 3.0 V
PC Collector Power Dissipation (Ta=25°C) 350 mW
Derate above 25°C 2.8 mW/°C
PC
Collector Power Dissipation (TC=25°C) 1.0 W
Derate above 25°C 8.0 W/°C
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55~150 °C
Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W
Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100μA, IE=0 30 V
BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V
BVEBO Emitter-Base Breakdown Voltage IE=10μA, IC=0 3.0 V
ICBO Collector Cut-off Current VCB=25V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=2V, IC=0 100 nA
hFE DC Current Gain VCE=10V, IC=4mA 60
VCE (sat) Collector-Emitter Saturation Voltage IC=4mA, IB=0.4mA 0.5 V
VBE (on) Base-Emitter On Voltage VCE=10V, IC=4mA 0.95 V
fT Current Gain Bandwidth Product VCE=10V, IC=4mA, f=100MHz 650 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 0.7 pF
Crb Collector Base Feedback Capacitance VCB=10V, IE=0, f=1MHz 0.35 0.65 pF
Cc·rbb´ Collector Base Time Constant VCB=10V, IC=4mA,
f=31.8MHz
9.0 ps

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