开关二*管1SS380

Silicon Epitaxial Planar Diode 1SS380
Document number: BL/SSSDB006www.galaxycn.com
Rev.A 1
FEATUR*
z Small surface mounting t*e.
z High speed.
z Suitable for high packing density.
APPLICATIONS
z High speed switching. SOD-323
ORDERING INFORMATION
T*e No. Marking Package Code
1SS380 6D SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
DC Reverse Voltage VR 35 V
Peak forward Current IFSM 225 mA
Average Rectified Output Current IO 100 mA
Power Dissipation PD 200 mW
Junction temperature Tj 125 ℃
Storage temperature TSTG -55~+125 ℃
ELE*RICAL CHARA*ERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Min. T*. Max. Unit Conditions
Forward voltage VF 1.2 V IF=100mA
Reverse current IR 15 nA VR=20V
Capacitance between terminals * 5 pF VR=0.5V,f=1MH

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