低电压*开关二*管

Diode Silicon Epitaxial Schottky Barrier T*e
1SS357
Low Voltage High Speed Switching
z Low forward voltage : VF (3) = 0.54V (t*.)
z Low reverse current : IR = 5μA (max)
z Small package : SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 45 V
Reverse voltage VR 40 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 1 A
Power dissipation P 200* mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a gl* epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min T*. Max Unit
VF (1) ― IF = 1mA ― 0.28 ―
Forward voltage VF (2) ― IF = 10mA ― 0.36 ―
VF (3) ― IF = 100mA ― 0.54 0.60
V
Reverse current IR (1) ― VR = 40V ― ― 5 μA
Total capacitance * ― VR = 0, f = 1MHz ― 18 25 pF
Pin Assignment (Top View) Marking

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