*现货供应 三*管2SA1213

TOSHIBA Transistor Silicon PNP Epitaxial T*e (P* process)
2SA1213
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High speed switching time: tstg = 1.0 μs (t*.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC2873
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Base current IB −0.4 A
PC 500
Collector power dissipation PC
(Note 1)
1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).