品牌/商标 | IR美国国际整流器公司 | 型号/规格 | IRG4PH20KPBF |
种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 增强型 | 用途 | CC/恒流 |
封装外形 | CER-DIP/陶瓷直插 | 材料 | IGBT*缘栅比* |
开启电压 | 3.17(V) | 夹断电压 | 1200(V) |
低频跨导 | 1(μS) | *间电容 | 1(pF) |
低频噪声系数 | 1(dB) | *大漏*电流 | 11000(mA) |
*大耗散功率 | 60000(mW) |
*原装IGBT 11A 1200V 60W N沟
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
Features
Benefits
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
友情链接: 深圳市元东发电子有限公司