非易失性存储器 DS1270

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产品概述：	The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.
应用特性：	years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Full ?0% VCC operating range (DS1270Y) Optional ?% VCC operating range (DS1270AB) Optional industrial temperature range of -40°C to +85°C, designated IND
应用领域：	NV SRAM