RA33H1516M1
三菱
企业名:北京京瑞馨科技发展有限公司
类型:贸易/代理/分销
电话: 010-64920890
手机:13811400355
联系人:周小姐
邮箱:381695427@qq.com
地址:北京北京市北京市海淀区西三旗桥东上奥世纪中心1号楼1-904
DESCRIPTION
The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for
12.5volt mobile radios that operate in the 154- to 162MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 3.0V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4V (typical) and 5V (maximum). At VGG=5V, the typical
gate current is 1 mA.
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>33W, T>50% @ VDD=12.5V, VGG=5V, Pin=10mW
• Broadband Frequency Range: 154-162MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 46 x 14.4 x 6.3 mm
RoHS COMPLIANCE
• RA33H1516M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
全新原装供应:
企业名:北京京瑞馨科技发展有限公司
类型:贸易/代理/分销
电话: 010-64920890
手机:13811400355
联系人:周小姐
邮箱:381695427@qq.com
地址:北京北京市北京市海淀区西三旗桥东上奥世纪中心1号楼1-904
友情链接: 深圳市元东发电子有限公司