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PIN 二*管：
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① *兼容 HP,ALPHA,和M/ACOM的PIN二*管
② 具备各种封装形式：chip ,beam lead ,axial gl* ,coaxial , microstrip ,stripline等
③ τ（少子寿命 Minority carrier lifetim）从5ns到5μs,VBR可以*1000V，θJC 可以*50 C/W
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衰减 Attenuator：
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Controlled and monotomic R v I characteristic
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压限 Limiting：
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Characterized by limithing threshold,leakage Down and withstand/recovery properties
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开关 Switching：
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T and R trado off is optimized for twitcing speed at on curront
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SOT23封装的PIN衰减二*管*限值：
I --------- 100mA
V --------- 200V
P.D.------ 200MW @TC=25℃
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型号
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结构
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Min.
Breakdown voltage(V)
IR=10μA
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Max.
Capacitance
(pF) f=1MHz
VR=50V
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Max.Series Resistance(Ω)
f=100MHz
IF=10 mA
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T*ical seriesResistance
(Ω)f=100MHz IF=10 μA
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T*icalCarrier Lifetime(uSEC)
IF=10 mA
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APA1000
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单管
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200
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0.35
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6.0
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30/1500
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2.0
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APA1000CC
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共阴*
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200
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0.35
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10.0
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30/1500
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2.0
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PIN CONFIGURATION (管脚排列)：
Single(单管)：
Pin #1 = Anode Pin #2 = N.C Pin #3 = Cathode
*脚：阳* 第二脚：未接 第三脚：阴*
Common Cathode(共阴*)：
Pin #1 = Anode Pin #2 = Anode Pin #3 = Cathode
*脚：阳* 第二脚：阳* 第三脚：阴*
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FAST SWITCHING
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PART NU*ER
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VBRMINA1
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CJ-62
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RSmax3
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R*ax
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TL4t*
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TS5
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OR6
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@10μA
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max
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@20mA
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@100mA
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10-90%
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(volts)
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(PF)
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(Ohms)
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(Ohms)
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(nsec)
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90-10%
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(℃/W)
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AP700A
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70
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0.05
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2.8
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2.5
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50
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5
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60
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AP700B
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70
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0.1
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2
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1.8
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50
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5
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60
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AP700C
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70
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0.2
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1.7
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1.5
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50
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5
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50
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AP700D
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70
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0.3
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1.2
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1
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50
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5
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50
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AP1000A
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100
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0.05
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2.6
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2
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100
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10
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50
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AP1000B
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100
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0.1
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2
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1.7
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100
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10
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45
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AP1000C
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100
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0.2
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1.5
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1.2
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100
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10
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45
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AP1000D
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100
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0.3
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1.2
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1
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100
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10
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40
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AP2000A
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200
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0.1
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2.4
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1.8
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200
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20
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40
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AP2000B
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200
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0.2
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1.4
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0.9
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200
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20
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35
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AP2000C
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200
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0.3
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1
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0.8
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200
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20
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35
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ULTRA SWITCHING
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PART
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VBRMINA1
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CJ-62
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RSmax3
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R*ax
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TL4t*
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TS5
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OR6
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NU*ER
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@10μA
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max
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@20mA
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@100mA
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10-90%
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(volts)
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(PF)
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(Ohms)
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(Ohms)
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(nsec)
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90-10%
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(℃/W)
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AP300A
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30
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0.15
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1.5
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10
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15
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40
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AP300B
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30
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0.2
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1.2
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10
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15
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40
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AP300C
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30
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0.25
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1
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10
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15
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35
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MEDIUM POWER SWITCHING
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PART
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VBRMINA1
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CJ-62
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RSmax3
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R*ax
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TL4t*
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TS5
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OR6
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NU*ER
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@10μA
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max
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@20mA
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@100mA
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10-90%
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(volts)
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(PF)
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(Ohms)
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(Ohms)
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(nsec)
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90-10%
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(℃/W)
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AP3000A
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300
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0.05
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3
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1.7
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600
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300
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25
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AP3000B
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300
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0.1
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2
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1.2
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800
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400
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200
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AP3000C
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300
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0.3
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1.5
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0.6
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1000
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500
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12
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AP3000D
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300
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0.5
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1
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0.5
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1000
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500
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10
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AP5000A
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500
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0.1
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2
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1.2
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1200
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600
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18
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AP5000B
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500
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0.3
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1.5
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0.6
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1200
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600
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10
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AP5000C
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500
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0.5
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1
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0.5
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1200
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600
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9
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*TE：
1.Breakdown voltage (VB) is measured at 10μA of reverse bias current
2.Junciton capacitance is measured on a 1MHZ Boonton capacitance bridge
3.Series resistance is measured at 1 GHZ using tran*ission loss techniques
4.Minority carrier lifetime is measured with 1F 10mA and IR=6 mA at the 90% recovery point
5.Switching time is measured between IF=10mA and VR=10V
6. Thermal resistance is measured 6.using △VF versus TIME in a thermal impedence meter and an infinite heat sink
7.Available in package style 01,15,51,52,53.Other styles available on request
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SHARP PIN管
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型号
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特点
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封 装
（材料）
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Isc
（μA）MIN.
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λp
（nm） TYP.
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Ev （Ix）
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PD49PI
(PDF 59.0KB)
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PIN型
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可视光截止树脂
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2.4
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100
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1 000
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PD410PI
(PDF 59.8KB)
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可视光截止树脂带聚光镜
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2.5
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100
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1 000
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PD411PI
(PDF 65.9KB)
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带透明聚光镜
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5
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100
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960
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PD412PI
(PDF 64.8KB)
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带透明聚光镜
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3.5
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100
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800
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PD41*I
(PDF 60.0KB)
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PIN型 IrDA1.0
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可视光截止树脂带聚光镜
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MIN. 4.5（TYP. 5.4）
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100
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（820～
1 040）
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PD480PI
(PDF 61.8KB)
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PIN型
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透明环氧树脂
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1
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100
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950
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PD481PI
(PDF 59.0KB)
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可视光截止树脂
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3.5
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100
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960
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PD60T
(PDF 38.8KB)
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芯片型
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透明环氧树脂
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TYP.4
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1 000
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960
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PD100MC0MP
(PDF 55.2KB)
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无引脚芯片型
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透明环氧树脂
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0.6
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100
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820
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PD100MF0MP
(PDF 55.2KB)
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无引脚芯片型
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可视光截止树脂
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0.4
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100
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850
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供应韩国KEC PIN二*管
我司代理销售韩国KEC二*管，规格如下：
Diode > Pin Diode Pin Diode Total 8 Device * Negative is PNP Transistor Device Name Application Spice Parameter Package Complementary VR(V) IF(mA) Tj(∩) Tstg(∩) VF(t*.)(V) @ IF(mA) VR(min.)(V) @ IR(□) *(t*.)(pF) @ VR(V) @ f(MHz) rs(t*.)(ohm) @ IF(mA) @ f(MHz)
KDV141E Antenna Switching Diode *C 30 100 150 -55~150 - - - - - 1 1 - 10 100 KDV141F Antenna Switching Diode TFSC 30 100 150 -55~150 0.82 1 10 100
KDV142E Antenna Switching Diode *C 30 100 150 -55~0 KDV142F Antenna Switching Diode TFSC 30 100 150 -55~0
KDV173 VHF/UHF Band Attenuator Diode SOT-23 50 50 150 -55~150 0.95 50 50 10 0.25 50 1 7 10 100 KDV174 VHF/UHF Band Attenuator Diode USM 50 50 150 -55~150 0.95 50 50 10 0.25 50 1 7 10 100
KDV175 VHF/UHF Band Attenuator Diode USC 50 50 150 -55~150 0.95 50 50 10 0.25 50 1 7 10 100
KDV175E VHF/UHF Band Attenuator Diode *C 50 50 150 -55~150 0.95 50 50 10 0.25 50 1 7 10 100
C:Conserved D:Discontinued U:Under Development [1]
应用于业界*小封装“SC2”
*小型PIN二*管、变容二*管
Part Number : JDP2S08SC/JDV2S22SC 及其他
针对移动电话等便携式产品*向小型化方向发展，开发了“JDP2S08SC”PIN二*管、 “JDV2S22SC”变容二*管等七种应用于业界*小封装（封装名称：SC2）的产品，“SC2”封装主要用于移动机器，可与0603型无源芯片部件*。
新封装（SC2）封装面积较本公司目前*小封装（fSC：1.0×0.6×0.48mm）约减小33%，厚度约减小62%。今后将用SC2封入市场所需芯片，并扩充SC2封装产品线。
特征
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业界*小的两针脚封装：采用引脚位于下面的方式，适用于0.62mm×0.32mm×0.30mm(标准)的高密度封装
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虽为*小型产品，但*了*传统封装产品（fSC封装）的高频特性。
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采用无铅封装。
主要参数
PIN 二*管
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产品号
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JDP2S08SC
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封装
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SC2 (0.62 x 0.32 x 0.30 mm t*.), 标准
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电容总量
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0.25 pF t*. @ 1V, 1 MHz
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串联电阻
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1.0 Ωt*. @ 10 mA, 100 MHz
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变容二*管
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产品号
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JDV2S22SC
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封装
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SC2 (0.62 x 0.32 x 0.30 mm t*.), 标准
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电容总量
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3.38 pF t*. @ 1V, 1 MHz
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容量比
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1.85 t*. @ 1 V/3 V
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变容二*管
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产品号
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JDV2S25SC
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JDV2S26SC
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JDV2S27SC
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JDV2S28SC
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JDV2S29SC
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电容总量
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5.75pF t*.@1V, 1MHz.
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15.8pF t*.@1V, 1MHz.
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8.25pF t*.@1V, 1MHz.
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10.45pF t*.@1V, 1MHz.
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3.73pF t*.@1V, 1MHz.
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容量比
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2.9 t*. @1V/4V.
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2.9 t*. @1V/4V.
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2.9 t*. @1V/4V.
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3.0 t*. @1V/4V.
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2.8 t*. @1V/4V.
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