SSD-602 紫外线传感器

型号/规格：
SSD-602 紫外线传感器 SSD-602 紫外线传感器 (贴片式)
品牌/商标：
HONEYWELL（霍尼韦尔）

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企业名：深圳华高微电子有限公司

类型：生产企业

电话： 0755-83370251

联系人：崔先生

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地址：广东深圳深圳市福田区车公庙泰然八路深业泰然大厦C区3407室

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传感器(100)
∟ 其他传感器(100)

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商品信息

SSD-602 紫外线传感器 (贴片式)
1.     简介
SSD-602 紫外线传感器是一种P-N异质节光电二*管，是基于氮化镓宽禁带半导体材料制备而成的。氮化镓的禁带宽度约为3.4电子伏，它不吸收可见光。该类传感器具有很强的可见光*干扰特性，在检测紫外线时不需附加滤光片来抑制可见光。其检测紫外线的主要响应区域覆盖了长波紫外线 (UVA, 波段范围420 nm-320 nm) 和中波紫外线 (UVB, 波段范围 320 nm-275 nm ) 的波段范围。
2.     用途：
a.       测试太阳光中的紫外线强度 (礼品、化妆品用具)；
b.       紫外线灯管的紫外线发生强度测试 (*器械或民用 *碗柜的*效率检验)；
3.     特点：
a.       对紫外线检测灵敏度高；
b.       感应重复性高；
c.       *可见光干扰强；
d.       体积微小；
e.       寿命长；
4.     适用人士：长期从事户外工作的*工程师、爱好旅游的人士、注重皮肤*的女性以及需要携同出行的婴幼儿；
5.     传感器参数

参数	*号	条件	*小值	中心值	*大值	单位
光谱带宽变化范围	l_b	—	290	—	400	nm
峰值灵敏度波长	lp	—	—	330	—	nm
暗光输出电压	V_dark	光强= 100 mW/m² lp= 330 nm	—	0	2	mV
灵敏度	Vs	R_L=1MΩ	3.9	4.0	4.1	mV/UVI
反向击穿电压	V_BR	—	30	40	100	V
正向电压	V_F	I_f=10mA	2.6	3.0	3.5	V
总电容	C_t	f=1MHz	—	6	—	pF
上升时间	t_r	R_L=1MΩ C_L=1000pF	—	10	—	mS
下降时间	t_f	R_L=1MΩ C_L=1000pF	—	500	—	mS

UV Photodiodes GaN

UV-photodiodes based on GaN are intrinsic visible blind due to high bandgap material, extreme irradiation hardness

	Spectral range	Chip size	Package	Note
GUVA-S10GD	200 - 370 nm	0.16 mm²	SMD 3528	Si window
GUVB-S11GD	200 - 320 nm	0.16 mm²	SMD 3528	Si window
GUVA-T11GD	200 - 370 nm	0.16 mm²	TO-46	quartz window
GUVB-T11GD	200 - 320 nm	0.16 mm²	TO-46	quartz window
GUVA-S12GD	240 - 370 nm	0.16 mm²	SMD 3528	silicon window
GUVA-S22ED	290 - 370 nm	0.16 mm²	SMD 1608	silicon/epoxy window
GUVC-T10GD	200 - 290 nm	0.16 mm²	TO-46	quartz window

UV Sensor Modules GaN

UV Sensor Modules based on GaN

	Spectral range	Size	Note	Data sheet
GUVA-S22EM-3	290 - 370 nm	8 x 8 x 2 mm³	*all size	request
GUVA-T11GM-LA	220 - 370 nm	28 x 17 x 9 mm²	basic	request
GUVA-T11GM-2	220 - 370 nm	36 x 22 x 7 mm²	adjustable gain	request

UV Photodiodes AlGaN

UV photodiodes based on AlGaN

	Spectral range	Chip size	Package	Note
GaN-UVA-SMD	220 - 370 nm	0.076 mm²	SMD 3228	peak at 350 nm
AlGaN-UVB	225 - 317 nm	0.076 mm²	TO-18	peak at 300 nm

UV Photodiodes SIC

UV-photodiodes based on SiC (Silicon Carbide) are intrinsic visible blind due to high bandgap material, extreme irradiation hardness, versions with integrated UVA, UCB or UVC filters on request

	Spectral range	Active Area	Package	Note
SIC01S	210 - 380 nm	0.054 mm²	TO-18	peak at 285 nm
SIC01S-C	230 - 285 nm	0.054 mm²	TO-39	peak at 270 nm
SIC01S-HAT	210 - 380 nm	0.054 mm²	TO-18	peak at 285 nm
SIC01S-ISO	210 - 380 nm	0.054 mm²	TO-18	pins are isolated
SIC01M	220 - 360 nm	0.22 mm²	TO-18	peak at 280 nm
SIC01M-C	230 - 285 nm	0.22 mm²	TO-39	peak at 270 nm
SIC01M-LENS	220 - 360 nm	0.22 mm²	TO-39	flame detection
SIC01L-5	220 - 360 nm	0,96 mm²	TO-5	peak at 280 nm
SIC01L-18	220 - 360 nm	0,96 mm²	TO-18	peak at 280 nm
SIC01L-5-C	230 - 285 nm	0,96 mm²	TO-39	peak at 270 nm
SIC02S	210 - 380 nm	0.054 mm²	stainless steel V2A	peak at 285 nm
ERYF-STAR			TO-18	erythema sensor, for accurate sun-UV dosimetry

UV Photodiodes SIC - large area arrays

UV photodiode array based on 4 parallel SiC detector chips for ultra low level UV radiation sensitivity, active area: 3.84 mm², peak response at 280 nm

	Spectral range	Chip size	Package	Note
SIC01L4-5	210 - 380 nm	3.84 mm²	TO-5	peak at 285 nm, Id 20 fA, 800 pF
SIC01L4-5-C	230 - 285 nm	3.84 mm²	TO-5	peak at 270 nm, Id 20 fA, 800 pF

UV Photodiodes SIC with TIA

UV photodiode based on SiC with integrated transimpedance amplifier for ultra low level UV radiation detection, peak response at 280 nm

		Spectral range	Package	Note
	UV-TIAMO-BL	210 - 380 nm	TO-5	sensitivity 0.5V/nW, gl* lens

UV Photodiodes GaP

UV photodiodes based on GaP

	Spectral range	Active Area	Package	Note
EPD-150-0/2.5	130 - 550 nm	4.8 mm²	TO-39	sapphire window
EPD-150-0/3.6	130 - 550 nm	10.9 mm²	TO-39	sapphire window
EPD-440-0/0.9	190 - 550 nm	0.51 mm²	TO-46
EPD-440-0/1.4	190 - 550 nm	1.2 mm²	TO-46
EPD-440-0/2.5	190 - 550 nm	4.8 mm²	TO-39
EPD-440-0/3.6	190 - 550 nm	10.9 mm²	TO-39
EPD-280-0-0.3-1	220 - 380 nm	0.056 mm²	TO-46
EPD-270-0-0.3-2	230 - 285 nm	0.056 mm²	TO-39
EPD-365-0/0.9	245 - 405 nm	0.51 mm²	TO-46	UG11 filter
EPD-365-0/1.4	245 - 405 nm	1.2 mm²	TO-46	UG11 filter
EPD-365-0/2.5	245 - 405 nm	4.8 mm²	TO-39	UG11 filter
EPD-365-0/3.6	245 - 405 nm	10.9 mm²	TO-39	UG11 filter
EPD-310-0-0.3-2	290 - 330 nm	0.056 mm²	TO-39
EPD-360-0-0.3-2	230 - 400 nm	0.056 mm²	TO-39

UV Photodiodes TiO2

UV photodiodes based on thin film TiO2 sensor technology

	Spectral range	Package	Note
UVD39	225 - 380 nm	TO-39	peak at 300 nm, intrinsic visible blind
EryF	215 - 325 nm	TO-18	peak at 300 nm, intrinsic visible blind, erythema sensor DIN5050
TW30SX	215 - 387 nm	TO-18	peak at 300 nm, UV AB, intrinsic visible blind
TW30SY	215 - 387 nm	TO-39	peak at 300 nm, intrinsic visible blind
TW30DZ	253 - 361 nm	TO-46	peak at 300 nm, intrinsic visible blind
TW30DY	253 - 361 nm	TO-39	peak at 300 nm, intrinsic visible blind
TW30DY2	260 - 362 nm	TO-39	peak at 300 nm, UV AB, intrinsic visible blind
UV-sensor chip die 4.4 mm²			thin film sensor
UV-sensor chip die 15.66 mm²			thin film sensor