ERIS  P3MNC020 PPAK3X3 21+

General Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.

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